Spesifikasi teknologi IRLML5103GTRPBF
Spesifikasi Teknikal Infineon Technologies - IRLML5103GTRPBF, Atribut, Parameter dan Bahagian dengan Spesifikasi Sama dengan Infineon Technologies - IRLML5103GTRPBF
| Atribut produk | Nilai atribut | |
|---|---|---|
| Pengeluar | Infineon Technologies | |
| Voltan - Ujian | 75pF @ 25V | |
| Voltan - Breakdown | Micro3™/SOT-23 | |
| VGS (th) (Max) @ Id | 600 mOhm @ 600mA, 10V | |
| VGS (Max) | 4.5V, 10V | |
| Teknologi | MOSFET (Metal Oxide) | |
| Siri | HEXFET® | |
| Rosh Status | Cut Tape (CT) | |
| Rds On (Max) @ Id, VGS | 760mA (Ta) | |
| polarisasi | TO-236-3, SC-59, SOT-23-3 | |
| Nama lain | IRLML5103GTRPBFCT | |
| Suhu Operasi | -55°C ~ 150°C (TJ) | |
| pemasangan Jenis | Surface Mount |
| Atribut produk | Nilai atribut | |
|---|---|---|
| Kelembapan Kepekaan Level (MSL) | 1 (Unlimited) | |
| Pengilang Standard Lead Time | 10 Weeks | |
| Nombor Bahagian pengilang | IRLML5103GTRPBF | |
| Input kemuatan (CISS) (Max) @ Vds | 5.1nC @ 10V | |
| Jenis IGBT | ±20V | |
| Gate Charge (QG) (Max) @ VGS | 1V @ 250µA | |
| FET Ciri | P-Channel | |
| berkembang Penerangan | P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | |
| Parit untuk Source Voltan (Vdss) | - | |
| Penerangan | MOSFET P-CH 30V 0.76A SOT-23-3 | |
| Semasa - Drain berterusan (Id) @ 25 ° C | 30V | |
| Nisbah kemuatan | 540mW (Ta) |
Tiga bahagian di sebelah kanan mempunyai spesifikasi yang sama dengan Infineon Technologies IRLML5103GTRPBF.
| Atribut produk |  |
|
 |
|
|---|---|---|---|---|
| Nombor Bahagian | IRLML5103GTRPBF | IRLML2803GTRPBF | IRLML5203 | IRLML5203GTRPBF |
| Pengeluar | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| pemasangan Jenis | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (QG) (Max) @ VGS | 1V @ 250µA | 1V @ 250µA | 14 nC @ 10 V | 2.5V @ 250µA |
| Rosh Status | Cut Tape (CT) | Cut Tape (CT) | - | Tape & Reel (TR) |
| Voltan - Breakdown | Micro3™/SOT-23 | Micro3™/SOT-23 | - | Micro3™/SOT-23 |
| Nombor Bahagian pengilang | IRLML5103GTRPBF | IRLML2803GTRPBF | - | IRLML5203GTRPBF |
| Siri | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Parit untuk Source Voltan (Vdss) | - | - | 30 V | - |
| Pengilang Standard Lead Time | 10 Weeks | 10 Weeks | - | 13 Weeks |
| FET Ciri | P-Channel | N-Channel | - | P-Channel |
| Voltan - Ujian | 75pF @ 25V | 85pF @ 25V | - | 510pF @ 25V |
| Suhu Operasi | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Teknologi | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| berkembang Penerangan | P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | - | P-Channel 30V 3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23 |
| Nama lain | IRLML5103GTRPBFCT | IRLML2803GTRPBFCT | - | IRLML5203GTRPBF-ND IRLML5203GTRPBFTR SP001567222 |
| polarisasi | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | - | TO-236-3, SC-59, SOT-23-3 |
| Input kemuatan (CISS) (Max) @ Vds | 5.1nC @ 10V | 5nC @ 10V | 510 pF @ 25 V | 14nC @ 10V |
| Rds On (Max) @ Id, VGS | 760mA (Ta) | 1.2A (Ta) | 98mOhm @ 3A, 10V | 3A (Ta) |
| VGS (th) (Max) @ Id | 600 mOhm @ 600mA, 10V | 250 mOhm @ 910mA, 10V | 2.5V @ 250µA | 98 mOhm @ 3A, 10V |
| Nisbah kemuatan | 540mW (Ta) | 540mW (Ta) | - | 1.25W (Ta) |
| Semasa - Drain berterusan (Id) @ 25 ° C | 30V | 30V | 3A (Ta) | 30V |
| Jenis IGBT | ±20V | ±20V | - | ±20V |
| VGS (Max) | 4.5V, 10V | 4.5V, 10V | ±20V | 4.5V, 10V |
| Kelembapan Kepekaan Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | - | 1 (Unlimited) |
| Penerangan | MOSFET P-CH 30V 0.76A SOT-23-3 | MOSFET N-CH 30V 1.2A SOT-23-3 | - | MOSFET P-CH 30V 3A SOT-23-3 |
Muat turun IRLML5103GTRPBF PDF datasheets dan dokumentasi Infineon Technologies untuk IRLML5103GTRPBF - Infineon Technologies.
IRLML4202TRPBFIR
IRLML5103TRPBF MOSCypress Semiconductor (Infineon Technologies)IRLML2803GTRPBFInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT-23-3IRLML2803TRPBF MOSIRIRLML5103SIPUSEMIIRLML5203Infineon TechnologiesMOSFET P-CH 30V 3A MICRO3/SOT23IRLML5103TRPBF.IRIRLML5203GTRPBFInfineon TechnologiesMOSFET P-CH 30V 3A SOT-23-3IRLML5103GTRPBF.IRIRLML2803GPBFIRIRLML2803TRPBF-1Infineon TechnologiesMOSFET N-CH 30V 1.2A SOT23IRLML5103GPBFIRIRLML5203GPBFIRIRLML5103TRPBF-1IRIRLML2803TRPBFInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT23IRLML5103TRPBFInfineon TechnologiesMOSFET P-CH 30V 760MA SOT23IRLML5103TRInfineon TechnologiesMOSFET P-CH 30V 760MA SOT-23IRLML2803TRInfineon TechnologiesMOSFET N-CH 30V 1.2A SOT-23| Negara biasa rujukan masa logistik | ||
|---|---|---|
| Wilayah | Negara | Masa logistik (hari) |
| Amerika | Amerika Syarikat | 5 |
| Brazil | 7 | |
| Eropah | Jerman | 5 |
| United Kingdom | 4 | |
| Itali | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Jepun | 4 | |
| Timur Tengah | Israel | 6 |
| Rujukan Penghantaran DHL & FedEx | |
|---|---|
| Caj penghantaran (kg) | DHL Rujukan (USD $) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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